Please use this identifier to cite or link to this item:
http://dspace.cityu.edu.hk/handle/2031/7018
Title: | High Efficiency Broadband Amplifier |
Authors: | Cheuk, Hoi Tung |
Department: | Department of Electronic Engineering |
Issue Date: | 2013 |
Supervisor: | Supervisor: Dr. Chan, W S; Assessor: Dr. Tsang, K F |
Abstract: | Broadband efficiency power microwave amplifiers are one of the key components that are employed in radar, high-data-rate fiber-optic communication, and broadband instrumentation systems. Designing such an amplifier remains challenging to our engineers nowadays. i. Wideband Amplifier An extremely wide bandwidth with good performance has been employed in broadband systems traditionally in the past 2 decades called Distributed amplifier. In this report, we will go through this type of amplifier by using Bipolar Transistor (BJT) and Field-Effect Transistor (FET). 2 and 4 cascaded amplifiers are implemented to achieve 3Ghz and 5Ghz bandwidth respectively. ii. High Efficiency Power Amplifier In modern communications systems, highly powered amplifiers are required. However, designing a high efficiency power amplifier which operates with a wide range of RF input power had been a challenge in the communications system design. High efficiency helps to mitigate thermal issues and therefore improves the battery life. In this report, we will be exploring the existing design practices. Tapered-Line distributed method is used to achieve high efficiency power amplifier and provide an efficiency of approaching up to 45%. |
Appears in Collections: | Electrical Engineering - Undergraduate Final Year Projects |
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