Short-circuit protection gate drive circuits for power electronics applications

Ho, Siu Shing

Please use this identifier to cite or link to this item: http://dspace.cityu.edu.hk/handle/2031/5343

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DC Field	Value	Language
dc.contributor.author	Ho, Siu Shing	en_US
dc.date.accessioned	2008-12-10T01:24:04Z
dc.date.accessioned	2017-09-19T09:11:08Z
dc.date.accessioned	2019-02-12T07:28:19Z	-
dc.date.available	2008-12-10T01:24:04Z
dc.date.available	2017-09-19T09:11:08Z
dc.date.available	2019-02-12T07:28:19Z	-
dc.date.issued	2008	en_US
dc.identifier.other	2008eehss330	en_US
dc.identifier.uri	http://144.214.8.231/handle/2031/5343	-
dc.description.abstract	The Insulated Gate Bipolar Transistor (IGBT) is used for the system with high supply voltage and current inductive load system such as large motor. The Short Circuit Protection is the most important strategy to protect the system again damage and danger caused. One of the methods to achieve the protection scheme is reduce the Gate-Emitter voltage when the short circuit fault condition is detected, on the other hand, it limits the current before successfully turned-off the IGBT. This project is focus on the protection scheme under the Hard Switch Fault (HSF) and Fault Under Load (FUL) conditions.	en_US
dc.rights	This work is protected by copyright. Reproduction or distribution of the work in any format is prohibited without written permission of the copyright owner.	en_US
dc.rights	Access is restricted to CityU users.	en_US
dc.title	Short-circuit protection gate drive circuits for power electronics applications	en_US
dc.contributor.department	Department of Electronic Engineering	en_US
dc.description.supervisor	Supervisor: Prof. Hui, Ron S Y.; Assessor: Dr. Yan, W	en_US
Appears in Collections:	Electrical Engineering - Undergraduate Final Year Projects

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