Linearized amplifier

Wai, Miu Ching

Please use this identifier to cite or link to this item: http://dspace.cityu.edu.hk/handle/2031/4832

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DC Field	Value	Language
dc.contributor.author	Wai, Miu Ching
dc.date.accessioned	2007-10-08T04:20:24Z
dc.date.accessioned	2017-09-19T09:11:27Z
dc.date.accessioned	2019-02-12T07:28:44Z	-
dc.date.available	2007-10-08T04:20:24Z
dc.date.available	2017-09-19T09:11:27Z
dc.date.available	2019-02-12T07:28:44Z	-
dc.date.issued	2007
dc.identifier.other	2007eewmc789
dc.identifier.uri	http://144.214.8.231/handle/2031/4832	-
dc.description.abstract	Linearized 2GHz Class A and Class AB amplifiers by using parallel-configured BJT junction connected directly to the base of the main transistor are presented. At different biasing current levels, the linearization abilities of base-emitter and base-collector junctions of BJT for Class A amplifier are compared; it is found that BE-junction can linearize the amplifier at low biasing current level whilst BC-junction can linearize the amplifier at a wide range of biasing current levels, from relatively low to high. An optimum linearized 2GHz Class AB amplifier with more than 10dB reduction in the third-order intermodulation distortion and better power efficiency is shown.	en
dc.rights	This work is protected by copyright. Reproduction or distribution of the work in any format is prohibited without written permission of the copyright owner.
dc.rights	Access is restricted to CityU users.
dc.title	Linearized amplifier	en
dc.contributor.department	Department of Electronic Engineering	en
dc.description.supervisor	Supervisor: Dr. Chan, W S.; Assessor: Dr. Tsang, K F	en
Appears in Collections:	Electrical Engineering - Undergraduate Final Year Projects

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